Nonlinear dependence of X-ray diffraction peak broadening in In x Ga1− x Sb epitaxial layers on GaAs substrates

The configuration of the interfacial misfit array at In x Ga1− x Sb/GaAs interfaces with different indium compositions and thicknesses grown by metalorganic chemical vapor deposition was systematically analyzed using X-ray diffraction (XRD) reciprocal space maps (RSMs). These analyses confirmed that the epilayer relaxation was mainly contributed to by the high degree of spatial correlation of the 90° misfit array (correlation factors <0.01). The anisotropic peak-broadening aspect ratio was found to have a non-linear composition dependence as well as be thickness-dependent, related to the strain relaxation of the epilayer. However, the peak-broadening behavior in each RSM scan direction had different composition and thickness dependences.