A semiconductor device having reduced thickness, electronic product that uses the same, and methods for manufacturing the same

A semiconductor device which is capable of reducing a thickness, an electronic product that uses the same, and a method for manufacturing the same are provided. The method of manufacturing a semiconductor device includes a preparing a semiconductor substrate (500) (, 503b 503a) has a first and a second active region, on top. A first transistor (AT1) in the first active region (503a) includes a first gate structure (524), and first impurity regions (518a, 518b) on. A second transistor (AT2) in the second active region (503b) includes a second gate structure (540) and second impurity regions (548a, 548b) on. A first conductive pattern (539a) is located on the first transistor (AT1), wherein at least a portion of the first conductive pattern (539a) in a same distance from a top surface (500a) of the semiconductor substrate (500) as at least part of the second is arranged gate structure (540). The first structure (539a) can be formed on the first transistor (AT1), while the second transistor (AT2) is formed.