Fe doped InGaAs for the generation and detection of pulsed THz radiation

This paper presents the analysis of Fe doped InGaAs grown by molecular beam epitaxy (MBE) utilized in photoconductive antennas (PCAs) for the optical generation and detection of pulsed THz radiation at 1.55 μm wavelength. InGaAs: Fe shows very favorable characteristics for the application as THz antennas due to its large resistivity of ∼2000 Ω·cm and mobility of almost 1000 cm 2 /V·s, while still exhibiting ultrafast carrier trapping below 1 ps. This is confirmed by measured THz spectra which show a bandwidth of greater than 6 THz and up to 95 dB dynamic range.