Circuit-Based Hydrodynamic Modeling of AlGaN/GaN HEMTs

We have developed a simulation tool which enables us to perform circuit-based hydrodynamic modeling of realistic AlGaN/GaN TeraFET implementations (TeraFET: detector of THz radiation based on an antenna-coupled FET). The tool is based on the intrinsic hydrodynamic transport equations which are embedded into a commercially available circuit simulation environment via a novel implementation technique. For the modeling of the AlGaN/GaN HEMT devices under low bias conditions, we have derived a novel physics-based analytical model for the normalized Fermi level.