Autodoping of antimony and arsenic in silicon epitaxial layers

Abstract We experimentally investigated the phenomenon of autodoping in silicon epitaxial layers. The main aim of this work was to clarify the cause and the mechanism of the upward movement of the impurity and to change the doping profile near the interface of the substrate and the epitaxial layer. In the course of our experiments the concentration and type of the dopant material in the substrate were changed, the two-step epitaxial growth technique was tried, the growth rate was reduced, and vertical and lateral autodoping were measured with the capacitance- voltage method. The results are given in the form of doping profiles.