Modeling hysteretic current-voltage characteristics for resonant tunneling diodes

A simple macro circuit is described to model the hysteretic current-voltage characteristics of resonant tunneling diodes for SPICE simulation. The switch model in SPICE can be utilized to simulate the hysteretic characteristics. A multistate "hysteretic" memory cell based on resonant tunneling diodes with hysteretic current-voltage characteristic is also described and simulated using the proposed macro circuit model. The technique can also be used to model any hysteretic characteristic in general. >