Role of the Hf/Si Interfacial Layer on the High Performance of MoS2 Based Conductive Bridge RAM for Artificial Synapse Application

In this letter, we demonstrate the key role of the Hf/Si interfacial layer (IL) in Al/Cu/IL/MoS2/TiN conductive bridge RAM. Owing to controlling Cu migration through Hf rather than Si, the Hf interface device offers consecutive >4000 DC cycles and long program/erase (P/E) endurance of $> 2\times 10^{9}$ cycles under the low current operation of $100~\mu \text{A}$ at the fast switching speed of 100 ns. The Hf interface device shows gradual RESET, long-term potentiation/depression (LTP/LTD) pulses of 40/100 with small pulse width of 100 ns and a low power consumption of < 13 pJ is needed for artificial synapse applications.