Polycrystalline gallium nitride freestanding substrate and the light-emitting element using the same

Polycrystalline gallium nitride free-standing substrate is provided including a plurality of gallium nitride-based single crystal grains oriented in a specific crystal orientation in a direction substantially normal. The free-standing substrate, distributed tilted at various angles from the crystal orientation specific crystal orientation of the gallium nitride single crystal grains as measured by inverse pole figure map of electron backscatter diffraction (EBSD) of the substrate surface, the average inclination angle of 1 to 10 °. The light emitting element of the present invention, and the self-supporting substrate, are formed on a substrate, a light-emitting functional layer having a layer composed of a plurality of semiconductor single crystal grains having a single crystal structure in a direction substantially normal one or more provided. According to the present invention, it is possible to provide a can reduce polycrystalline gallium nitride free-standing substrate defect density of the substrate surface. It is also possible to provide a light emitting device high luminous efficiency by using a polycrystalline gallium nitride free-standing substrate of the present invention is obtained.