Evolution of nitrogen pairs and nitrogen-oxygen complexes in nitrogen-doped Czochralski silicon

By means of Fourier-transform infrared absorption spectroscopy, the evolution of nitrogen pairs (N-N) and nitrogen-oxygen complex (NNO) in nitrogen doped Czochralski (NCZ) silicon annealed at 650 °C has been investigated. The evolution of N-N pairs and NNO complexes has been semi-quantitatively elucidated based on the diffusion-limited reaction theory. It is pointed out that the N-O pairs and NNO complexes react with the interstitial atoms, leading to NNOx (x ≥ 1) particles, which serve as the nuclei of oxygen precipitate. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)