Advances in regrown all-semiconductor photonic crystal surface-emitting lasers (Conference Presentation)

We outline advances in the design, manufacture, and characterisation of a range of all-semiconductor photonic crystal surface emitting lasers (PCSELs). We initially discuss AlAs/GaAs based PC devices that enjoy improved index contrast compared to our previous GaInP/GaAs devices. We will also discuss all-semiconductor InGaAsP/InP based PC PCSELs operating at 1550 nm. For these high aspect ratio structures, the infill of the PC is a significant epitaxial challenge, and optimisation of MOVPE growth conditions such as growth temperature, rate of temperature increase, and V:III ratio, is demonstrated through TEM structural analysis. We will also discuss the optoelectronic properties of our devices.