Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures

Ya. V. Terent’ev,C. Zoth,V. V. Bel’kov,P. Olbrich,C. Drexler,V. Lechner,Peter Lutz,M. S. Mukhin,S. A. Tarasenko,A. N. Semenov,V. A. Solov’ev,I. V. Sedova,G. V. Klimko,T. A. Komissarova,S. V. Ivanov,Sergey Ganichev

Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures

2011

Ya. V. Terent’ev
C. Zoth
V. V. Bel’kov
P. Olbrich
C. Drexler
V. Lechner
Peter Lutz
M. S. Mukhin
S. A. Tarasenko
A. N. Semenov
V. A. Solov’ev
I. V. Sedova
G. V. Klimko
T. A. Komissarova
S. V. Ivanov
Sergey Ganichev

Diluted magnetic semiconductor heterovalent AlSb/InAs/ZnMnTe quantum well (QW) structures with an electron channel have been designed and grown applying molecular-beam epitaxy. The enhanced magnetic properties of QWs as a result of the exchange interaction with Mn2+ ions, are proved by measuring the microwave radiation induced spin polarized electric currents.

Keywords:

Spin polarization
Exchange interaction
Molecular beam epitaxy
Band gap
Magnetic semiconductor
Quantum well
Electron
Condensed matter physics
Electric current
Physics
Epitaxy
Wide-bandgap semiconductor

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