Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy

In As 0.05 Sb 0.95 photoconductive infra-red detectors have been grown by molecular beam epitaxy in recessed Si wells. The embedded devices exhibited a voltage responsivity of 420 V/W at 77 K and 300 meV photonenergy with a load resistor of 100 Ω and a bias voltage of 1•5 V