Single-crystal production device, single-crystal production method using said device, and single crystal produced using said method

In a single-crystal production device wherein a spraying means and a heating means are disposed facing each other with a seed substrate therebetween, a single crystal is produced from a powder by implementing: a film formation step in which the spraying means is used to spray the starting material powder towards the seed substrate to form a film upon a surface of the seed substrate; and a heating step in which the heating means is used to heat the film formed upon the surface of the seed substrate. As a result, a single-crystal production device is provided which exhibits excellent productivity, and which is capable of producing high-quality single crystals having few pores, even when using materials with which molten starting material is difficult to obtain.