Low noise hybrid amplifier using AlGaN/GaN power HEMT devices
2001
This work reports on efforts to demonstrate AlGaN/GaN Low Noise Amplifiers (LNAs) in epitaxial material designed to build power transistors. The hybrid LNA circuit produced a noise figure of 3 dB, a gain of 8.5 dB, an input return loss of -6.5 dB and an output return loss of -9 dB at 4 GHz. Further, devices in an enhanced process have improved noise characteristics and more realizable match conditions. These device enhancements will enable robust X-band LNA demonstrations.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
5
References
6
Citations
NaN
KQI