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Growth mechanism of GaN layer by UHV sputter epitaxy method
Growth mechanism of GaN layer by UHV sputter epitaxy method
2021
Genki Saito
Keisuke Yoshida
Hiroyuki Shinoda
Nobuki Mutsukura
Keywords:
Gallium nitride
mechanism
Epitaxy
layer
Materials science
Sputtering
Optoelectronics
Correction
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