the same lateral MISFET and methods for preparing

Lateral MISFET having a semiconductor body (3) of a doped semiconductor substrate (4) of a first conductivity type and provided from a on the semiconductor substrate (4) epitaxial layer (5) of a complementary to the first conductivity type said second conductivity type having a drain electrode (6), a source electrode ( 7), a gate electrode (8) with the gate insulator (9) and an (at the gate insulator 9) adjacent and (in the epitaxial layer 5) embedded semiconductor region (10) of the first conductivity type, between the source electrode (7) and the drain electrode (6 ) a drift zone (11) of the second conductivity type in said epitaxial layer (5) is disposed (in (in row 12) and columns 13) disposed columnar regions (14) are arranged, the boundary layers (15) (the drift region 11) a having material layer (16) having to the semiconductor material of the drift region (11) each comprise a Schottky contact (17).