Modeling of Self-Aligned Silicidation in 2D and 3D: Growth Suppression by Oxygen Diffusion

Stress-strain effects and physical processes during formation of the self-aligned silicides are analyzed. A new model for predictive simulation of the self-aligned silicidation is suggested. The model is based on suppression of diffusion and reaction rate of the silicon atoms inside silicide in the presence of oxygen atoms, injected into silicide from the neighbor oxide regions such as oxide spacer, TEOS at STI (Shallow Trench Isolation) and pad oxide. The model is demonstrated to explain the experimentally observed silicide shape.