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Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure
2004
Francesco Velardi
Francesco Iannuzzo
Giovanni Busatto
Jeffery Wyss
Annunziata Sanseverino
Andrea Candelori
Giuseppe Currò
Alessandra Cascio
F. Frisina
A. Cavagnoli
Keywords:
Optoelectronics
Materials science
Epitaxy
Voltage
heavy ion
Correction
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