Investigation of reactive ion etch-induced damage in InP surfaces using a noncontact photothermal radiometric probe

Abstract Process-induced damage in epitaxial InP films following CH 4 /H 2 reactive ion etching has been studied using a noncontact photothermal radiometric (PTR) probe. A significant shift in measured PTR amplitude as a function of applied bias voltage has been observed. Results are correlated with both Raman and photoluminescence measurements.