Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector
2021
Leakage current, that causes interferences in the read/write operation, arising from neighboring unselected or half-selected memory cells is considered as one of the main hurdles to be overcome to ...
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