A semiconductor chip and semiconductor device
2000
PROBLEM TO BE SOLVED: To provide a semiconductor chip in which external stress can be relaxed and a semiconductor device in which external stress being applied to an incorporated semiconductor chip can be relaxed. SOLUTION: Electrodes 112, 115 on one side 1a and the other side 1b of IGBT 11 and FWD 12 are made of pure Al and a barrier metal 111 is formed between the one side 1a of a substrate 110 and the electrode 112. One side 5a of a DBC substrate 4 is bonded to the other side 1b of the chips 11, 12 and the end part 23a of a heat dissipation member 20 on one side bonded to one side 1a of the chip is bonded to one side 5a of the DBC substrate 4. A heat dissipation member 24 on the other side is bonded to the other side 5b of the DBC substrate 4 and a heat dissipation plane 9 is formed on the heat dissipation member 24 on the other side.
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