Rectifying characteristics and transport behavior of SrTiO3−δ(110)∕p-Si (100) heterojunctions
2007
Introducing oxygen vacancy causes the dielectric insulator SrTiO3 to evolve to a n-type semiconductor. The authors have fabricated n-SrTiO3−δ(110)∕p-Si (100) heterojunctions, showing clear rectifying characteristics at different temperatures from 100to292K. A forward-to-reverse bias ratio of about 1200 was found at V=±2V for the p-n junction operated at T=292K. The current-voltage characteristic follows I∝exp(eV∕ηkT) for the p-n junction at relatively low forward-bias voltage, while the relation of I∼V1.9 describes the transport behavior of p-n junction at relatively high forward-bias voltage. The measured results have been discussed in Anderson model and space charge limited model.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
21
References
14
Citations
NaN
KQI