Investigations on rectifying behavior of Y0.95Ca0.05MnO3/Si junction

In this communication, we report the rectifying properties observed across the junction, consists of Ca+2 doped hexagonal YMnO3 manganite film, grown on n-type (100) Si single crystalline substrate. The junction was grown using cost effective chemical solution deposition (CSD) technique by employing spin coating method. Surface morphology of Y0.95Ca0.05MnO3/Si (YCMO/Si) film was carried out by atomic force microscopy and magnetic response of film was studied by magnetic force microscopy. Current – voltage characteristics of the junction was carried out by using Keithley source meter in current perpendicular to plane (CPP) mode at different temperatures. Rectification in I – V behavior has been observed for the junction at all the temperatures studied. With increase in temperature, rectification ratio, in the range of 104, increases across the junction. Results have been discussed in the context of thermal effects.