Physical failure analysis in semiconductor industry – challenges to microscopy

This chapter discusses the application of scanning and transmission electron microscopy techniques, X-ray microscopy, as well as scanning probe microscopy for physical failure analysis. With the scaling-down of transistor features and interconnect dimensions and with the introduction of new processes and materials, physical failure analysis becomes more and more an essential task to exclude both yield-limiting process irregularities and reliabilityrelated failures in the semiconductor industry. Advanced imaging tools and techniques are needed to ensure high manufacturing yield and product reliability. Physical failure analysis is an essential task to exclude both yield-limiting process deviations and reliability-related failures in integrated circuit (IC) manufacturing industry. Its goal is to determine the root cause of failures or parameter deviations as a prerequisite for corrective actions. Polysilicon Gate Roughness, control of the transistor gate critical dimension with nanometer accuracy is a top priority task for leading-edge IC manufacturing.