JBS-SiC semiconductor device

Integrated vertical JBS-SiC semiconductor device (10), in particular JBS-SiC power semiconductor component, - with a highly doped SiC semiconductor body (11) of a first conductivity type, - a low-doped drift region (15) of the first conductivity type, the emitter side to the semiconductor body (11) is arranged and at least partially in regions, to a first surface (18) is adjacent, - with at least one emitter region (16) of a second conductivity type, which is on the side of the first surface (18) in the drift zone (15) embedded in and attached to the first surface (18) is adjacent, - arranged with an inside the drift region (15) spaced from the emitter regions (16) and laterally through the entire drift region (15) through the intermediate layer (21) of the first conductivity type having a relation to the drift region (15) has higher doping concentration.