A Referenced Geometry Based Configuration Scalable Mextram Model for Bipolar Transistors
2006
A behavioral reference based model for configuration scaling of bipolar transistor model parameters is proposed. The model is applicable to bipolar technologies with one or two collector contacts and different number of emitters. The effectiveness of the proposed scaling methodology is verified in case studies using advanced high-speed SiGe HBT technology.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
10
References
3
Citations
NaN
KQI