Growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs

This article reviews our recent research efforts on GaAs passivation by the growth of a novel oxide made of Ga/sub 2/O/sub 3/ and Gd/sub 2/O/sub 3/. The oxide-GaAs interface has a low interfacial state density of 10/sup 10/ cm/sup -2/ eV/sup -1/, comparable to that of SiO/sub 2/-Si interface. A multi-chamber UHV system, including molecular beam epitaxy (MBE) growth chambers, has been used to fabricate Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)-GaAs device wafers. The growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/), in combining a conventional ion implantation process, enables us to demonstrate the first enhancement-mode GaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) with inversion.