Giant Photoluminescence Enhancement in MoSe$_{2}$ monolayers treated with Oleic Acid Ligands

The inherently low photoluminescence (PL) yields in as prepared transition metal dichalcogenide (TMD) monolayers are broadly accepted to be the result of atomic vacancies (i.e. defects) and uncontrolled doping, which give rise to non-radiative exciton decay pathways. To date, a number of chemical passivation schemes have been successfully developed to improve PL in sulphur based TMDs i.e. molybdenum disulphide (MoS$_{2}$) and tungsten disulphide (WS$_{2}$) monolayers. In contrast, no solution based chemical passivation schemes have been reported for improving PL yields in selenium (Se) based TMDs. Here, we demonstrate that treatment with oleic acid (OA) provides a simple wet chemical passivation method for monolayer MoSe$_{2}$, enhancing PL yield by an average of 58 fold, while also enhancing spectral uniformity across the material and reducing emission linewidth. Excitation intensity dependent PL reveals trap-free PL dynamics dominated by neutral exciton recombination, which is indicative of defect passivation by OA, which we hypothesise act as ligands, passivating chalcogen defects through oleate coordination to Mo dangling bonds.