Realizing high thermoelectric performance in hot-pressed polycrystalline AlxSn1-xSe through band engineering tuning

Abstract SnSe-based thermoelectric materials are being explored since they have potential high thermoelectric figure of merit. We synthesized polycrystalline AlxSn1-xSe (x = 0.01, 0.02, 0.03 and 0.04) by hot-pressing method, and combined theoretical estimation with experimental measurement to investigate the influence of Al doping on thermoelectric properties of SnSe. It was found that dopant Al can effectively adjust the band structure of SnSe by introducing intermediate band. Al doping with low content (x = 0.01 and 0.02) can introduce a single intermediate band close to the valence band maximum or conduction band minimum, achieving band engineering optimization. In high temperature region (498 K