AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

National Academy of Sciences of Belarus (State Programs of Scientific Research of Belarus “Photonics, opto- and microelectronics” 2.1.01; 2.1.04; Union State Scientific Program 5.3 Luch (Contract No. 618)); Institute of Physics and King Abdulaziz City for Science and Technology (Agreement No. KACST-SIPH/2-2)