Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction.

Room-temperature electroluminescence (EL) has been realized from Sn-doped In2O3 (In2O3:Sn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed n-In2O3:Sn nanorods onto a p-type 4H-SiC substrate. It is found that the emission intensity of the heterojunction LED under forward bias can be maximized by doping the In2O3 nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at ~395 and ~440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In2O3:Sn nanorods.