A method for film formation and structuring

A process for producing a semiconductor device, comprising the steps of: Preparing a substrate (1) having a surface, wherein the surface a first surface portion (2), which is formed from a first material and a second surface portion (3, 51, 60), which consists of a second, different to the first material material is formed; Forming metal layers on the surface of the substrate (1), wherein the metallic layers comprise a first metallic layer (4) and a second metallic layer (5) whose thickness is used to set a total voltage and the adhesive force between the metallic layers (4 , 5) and the first surface portion is smaller than the adhesive force between the metallic layers (4, 5) and the second surface portion; Adhering an adhesive layer (7) to the substrate (1) such that the metallic layers (4, 5) disposed between the substrate (1) and the adhesive layer (7); and Stripping of the adhesive layer (7) of the substrate (1), ...