Investigations on Raman and X-ray photoemission scattering patterns of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics

Abstract Vanadium incorporation in SrBi 4 Ti 4 O 15 results in an improvement of electric properties. Raman scattering reveals that V-addition brings about the local disorders of structure, charge, and internal stress. The chemical valence of Bi and Ti does not increase after V-doping. The electric property improvement is originated from the restraint of oxygen vacancies, mobility weakening of the defects, and the vacancies produced at A -site.