A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs

A continuous surface-potential solution of Poisson's equation is derived for intrinsic (or lightly doped) symmetric double-gate (DG) Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs). The resulting expression is smooth and continuous from accumulation through depletion to inversion regions. The dependences of the surface potential on various physical parameters including the quasi-Fermi potential, silicon film thickness, gate dielectric thickness and temperature are studied and compared with 2-D numerical simulation. Excellent agreements between them suggest that the proposed surface-potential solution is accurate over a wide range of physical parameters and can be used in surface-potential-based symmetric DG MOSFET modelling.