The photoluminescence spectra of N+, Zn+ implanted GaAs1-xPx at 1.8–4.2K

Abstract The photoluminescent behavior of N + and Zn + implanted GaAs 1-x P x has been investigated at 1.8-4.2K. The experimental results show that the alloy composition x, at which the conversion of N-Zn transition N and bound excitonic recombination occurs, depends on the nitrogen and zinc doping concentrations.