Fabrication and Luminescence Properties of Monoclinic Gallium Oxide (β-Ga 2 O 3 ) Nanostructures

β-Ga2O3 nanostructures including nanowires, nanorods, nano and micro-pillars, nanosheets and nanobelts were successfully fabricated by simple and efficient thermal evaporation and condensation technique under argon flow.. The structures have been investigated by the electron microscope, XRD and EDX techniques and shown that nanostructures are predominatly β-Ga2O3 without other crystallographic phases. Cathodouminescence of as-grown nanostructures was investigated in the 10-300 K temperature range and exhibit luminescence band centered at 485 nm at 300 K due to donor-acceptor pair recombination. A new luminescence band centered at 387 nm developes at temperature below 150 K due to self-trapped exciton recombination.