Polytype control of MoS2 using chemical bath deposition

Molybdenum disulfide (MoS2) has a wide range of applications from electronics to catalysis. While the properties of single-layer and multilayer MoS2 films are well understood, controlling the deposited MoS2 polytype remains a significant challenge. In this work, we employ chemical bath deposition, an aqueous deposition technique, to deposit large area MoS2 thin films at room temperature. Using Raman spectroscopy and x-ray photoelectron spectroscopy, we show that the deposited MoS2 polytype can be changed from semiconducting 2H MoS2 on hydrophobic –CH3 and –CO2C6F5 terminated self-assembled monolayers (SAMs) to semimetallic 1T MoS2 on hydrophilic –OH and –COOH terminated SAMs. The data suggest that the deposition of MoS2 polytypes is controlled by the substrate surface energy. High surface energy substrates stabilize 1T MoS2 films, while 2H MoS2 is deposited on lower surface energy substrates. This effect appears to be general enabling the deposition of different MoS2 polytypes on a wide range of substrates.Molybdenum disulfide (MoS2) has a wide range of applications from electronics to catalysis. While the properties of single-layer and multilayer MoS2 films are well understood, controlling the deposited MoS2 polytype remains a significant challenge. In this work, we employ chemical bath deposition, an aqueous deposition technique, to deposit large area MoS2 thin films at room temperature. Using Raman spectroscopy and x-ray photoelectron spectroscopy, we show that the deposited MoS2 polytype can be changed from semiconducting 2H MoS2 on hydrophobic –CH3 and –CO2C6F5 terminated self-assembled monolayers (SAMs) to semimetallic 1T MoS2 on hydrophilic –OH and –COOH terminated SAMs. The data suggest that the deposition of MoS2 polytypes is controlled by the substrate surface energy. High surface energy substrates stabilize 1T MoS2 films, while 2H MoS2 is deposited on lower surface energy su...