Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon

Abatract. New nitrogen related infrared absorption peaks were found at 855, 972, 983 and 1002 cm - 1 . The annealing temperature dependence and annealing time dependence at 1000 and 1100 °C of these peaks were examined andcompared with those of known peaks. They behaved similarly with those of 810 and 1018 cm - 1 peaks and were attributed to the same structure including N-O interstitial pair and oxygen interstitial, NOOi, which is closely related to shallow thermal donors. They decreased at lower temperature and faster at high temperature than nitrogen interstitial pair with oxygen interstitial, NNOi. It is confirmed that NN is dominant at defect formation temperature during cooling after growth. There were no other absorption peaks, such as those due to nitrogen substitutional, interstitial and NO pair.