Perspective Performances of MOS-Gated GTO in High-Power Applications

In this brief, we present the experimental and simulated characteristics of a new power semiconductor device called MOS-gated thyristor (MOS-GTO) for high-power applications. The results are presented for a 1.2-kV device and subsequently scaled up to 4.5-kV blocking voltage. The excellent on-state voltage and switching characteristics make MOS-GTO a very promising device for high-voltage power applications.