Virtual Source based I-V Model for Cryogenic CMOS Devices

Cryogenic CMOS has drawn increasing attention in the recent years as a potential candidate to control quantum bit (qubit) devices for scalable quantum computing systems. In such systems, the control electronics is expected to operate in the proximity of the qubits at extremely low temperature (e.g. $\leq 4\ \mathrm{K}$ ). While MOSFET devices from commercial technologies would still function as transistors at cryogenic temperatures, their behaviors deviate from what are expected by the current models developed and characterized for higher temperatures. In this paper, we extend the virtual-source model [1] to include important phenomenon at cryogenic temperatures, such as increase of subthreshold slope. The model shows good agreement with measured data from foundry 65-nm process devices.