Structure and morphology of SiC nanostructures synthesized on Cu films

Abstract The results of experiments on the synthesis of SiC nanostructures by chemical vapor deposition in microwave plasma are presented in this article. The single crystal silicon plates with orientation [111] which previously passed chemical purification were used as substrates. Furthermore, the substrates of porous silicon were prepared in order to activate the surface during the synthesis. The synthesis temperatures were 600 °C and 700 °C. Studies by scanning electron microscopy showed that formed nanostructures have a various diameter and a rough surface. The results of studies by Raman scattering confirmed that SiC nanostructures with structure of 3C-SiC are formed. Besides, the presence of main carbon peaks on both types of substrates which correspond to the carbon nanostructures should be noted.