A 30 GHz Low Power & High Gain Low Noise Amplifier with Gm-Boosting in 28nm FD-SOI CMOS Technology

This paper presents a 30 GHz Low Noise Amplifier (LNA) in 28nm FD-SOI CMOS technology for 5G applications. The LNA consists of two stages. The first stage is a cascode topology with g m -boosting technique in order to achieve low Noise Figure (NF). The second stage consists of a differential amplifier for the purpose of achieving higher gain. The first and second stages are coupled, using a balun (balanced to unbalanced) transformer. The proposed LNA exhibits a gain of 24.1 dB and the minimum NF of 3.7 dB at 30 GHz. This specific LNA design consumes only 9.3 mW from a power supply of 1V.