Carriers Distribution of Si-1xGex：C Buffers Grown on Si(100) by Chemical Vapor Deposition

Ge graded Si1-xGex：C buffers are deposited on p-Si(100)substrates by chemical vapor deposition (CVD) method.The results show that the higher growth temperature is，the more Ge concentration and the better crystal quality will get. Except for a local n-type zone，the buffer is P-type and the concentration of the above carriers increases from the substrate to the surface.The conductive distribution of the above carriers iS also discussed.