Channel Length Modulation Effect on Monolayer Graphene Nanoribbon Field Effect Transistor

R Graphene Nanoribbon Field Effect Transistors (GNR FETs) is attracting a great deal of attention due to their better performance in comparison with conventional devices. In this paper, channel length Modulation (CLM) effect on the electrical characteristics of GNR FETs is analytically studied and modeled. To this end, the spatial distribution of the electric potential along the channel and current-voltage characteristic of the device are modeled. The obtained results of analytical model are compared against the experimental data of published works. As a result, it is observable that considering the effect of CLM, the current-voltage response of GNR FET is more realistic.