Investigation of double peak voltage in pulse quenching effect on the single-event transient
2016
Pluse quenching is evaluate at device-level. Simulation results present that unnsynchronized flipping time of adjacent pMOS causing by overmuch distance of adjacent pMOS leads to double peak voltage.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
2
References
1
Citations
NaN
KQI