Epitaxial BaSnO3 thin films with low dislocation density grown on lattice matched LaInO3 substrates

The use of LaInO3with (110) surface orientation was investigated as a novel orthorhombic substrate for the epitaxial growth of semiconducting BaSnO3thin films. On the basis of reflection high-energy electron diffraction, energy dispersive x-ray analysis and inductively coupled plasma-optical emission spectrometry measurements, we revealed that slight Ba doping of LaInO3crystals is beneficial to stabilize the substrate surface, which facilitates the epitaxial growth of well-ordered BaSnO3thin films by pulsed laser deposition. Fully strained BaSnO3films without misfit dislocations found by means of transmission electron microscopy were achieved due to the negligible lattice mismatch between BaSnO3film and Ba-doped LaInO3substrate. Electric properties of La-doped BaSnO3films exhibit a Hall-mobility of 69 cm2V-1s-1at room temperature and 99 cm2V-1s-1at 20 K at a constant charge carrier density of 3.8·1019cm-3.