Spray-coatable negative photoresist for high topography MEMS applications

In microsystem technology, the lithographical processing of substrates with a topography is very important. Interconnecting lines, which are routed over sloped topography sidewalls from the top of the protecting wafer to the contact pads of the device wafer, are one example of patterning over a topography. For structuring such circuit paths, a photolithography process, and therefore a process for homogeneous photoresist coating, is required. The most flexible and advantageous way of depositing a homogeneous photoresist film over structures with high topography steps is spray-coating. As a pattern transfer process for circuit paths in cavities, the lift-off process is widely used. A negative resist, like ma-N (MRT) or AZnLOF (AZ) is favoured for lift-off processes due to the existing negative angle of the sidewalls. Only a few sprayable negative photoresists are commercially available. In this paper, the development of a novel negative resist spray-coating based on a commercially available single-layer lift-off resist for spin-coating, especially for the patterning of structures inside the cavity and on the cavity wall, is presented. A variety of parameters influences the spray-coating process, and therefore the patterning results. Besides the spray-coating tool and the parameters, the composition of the resist solution itself also influences the coating results. For homogeneous resist coverage over the topography of the substrate, different solvent combinations for diluting the resist solution, different chuck temperatures during the coating process, and also the softbake conditions, are all investigated. The solvent formulations and the process conditions are optimized with respect to the homogeneity of the resist coverage on the top edge of the cavities. Finally, the developed spray-coating process, the resist material and the process stability are demonstrated by the following applications: (i) lift-off, (ii) electroplating, (iii) the wet and (iv) the dry chemical etching of metals on substrates with topographies.