Analysis of THz detection saturation processes in InGaAs-based HEMTs
2016
By numerical simulations, we investigate the behavior of the current photoresponse of InGaAs high electron mobility transistors (HEMTs) submitted to THz radiations. By increasing the incoming wave power density, the response of the device is shown to saturate, in agreement with experimental results. This limitation of the detection features is shown to be due to electron heating.
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