New analytical expressions for the design of linear power amplifier using GaN HEMTs
2009
This paper provides new analytic expressions for prediction of the large signal gain of GaN High Electron Mobility Transistors (HEMTs). Using the concept of load line resistance, optimum matching impedances and power gain are demonstrated for commercial GaN HEMT from a 14 lumped elements model. The source impedance is more accurately determined by this model.
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