Analysis of printed organic MOSFET characteristics with a focus on the temperature dependence

An experimental and theoretical investigation of the device characteristics of printed organic MOSFETs with a focus on the temperature dependence is reported. In particular, an anomalous behavior of the temperature dependence of the I ds–V gs characteristic is observed, which is found to be increased at higher temperature in MOSFETs fabricated with the printing technology. Our analysis suggests that the temperature dependence of the trap density and the carrier transport mechanism are the causes for this anomalous increase at higher temperature. The results obtained with the compact model HiSIM-Organic, developed based on the physics of carrier dynamics in organic materials, confirm these conclusions. Improving stable characteristics in circuit applications are demonstrated to be achievable at higher temperatures, due to these anomalous properties of organic MOSFETs fabricated by applying the printing technology.